Design of a High-Density Integrated Power Electronics Building Block (iPEBB) Based on 1.7 kV SiC MOSFETs on a Common Substrate

摘要

This paper presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the thermal, electrical, and mechanical performance, and contributes to the weight and reliability of the iPEBB. State-of-the-art organic direct bonded copper (ODBC) substrates are evaluated in this work. Multi-domain simulations are used to design the integrated SiC bridges to achieve a power loop inductance of 3.5 nH, a maximum temperature of 175 °C, and a weight of 16 kg. A half-bridge module prototype is fabricated and tested to provide insight into the substrate functionality and to aid in the refinement of the iPEBB concept.