500 MHz, 100 W X-Band Solid State Amplifier

摘要

This paper describes advances made in developing a wideband, high power solid state amplifier at X-band. Presently a bandwidth of 500 MHz with peak power levels of 100 W at 30% duty have been obtained by combining only four GaAs IMPATT diodes in a spatial field type of power combiner/amplifier. Key features of this device are its high combining efficiency ( ~ 95%), a high degree of isolation (>30 dB) between elemental amplifier modules and a 10 dB stable dynamic range.