The paper presents the study and the analysis of a gate driver power supply integrated within a vertical power MOSFET. The supply is co-integrated without any technological extra step and presents interesting operational behavior and characteristics. Thanks to a specific analysis, the behavior and the characteristics of the supply are well described. Especially, numerical and analytical modelings are used in the view of helping the design of the full structure as a function of the power device technological process and physical structure. A special care is given to the consequence of the integration in terms of interactions, functional operation and performances. A practical realization is used in order to validate the behavior and the analysis carried out in this paper.
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