Optically-triggered power transistor (OTPT) for Fly-by-light (FBL) and EMI-susceptible power electronics: Plenary paper

摘要

Significance of direct photonically-controlled power switching devices has been illustrated for electromagnetic-interference immune power electronics. Experimental prototype, initial characterization results, and key simulation results for III-V GaAs/AlGaAs-based optically-triggered power transistor have been shown. Superjunction charge-compensation technique and unique optical-modulation properties have been illustrated Key processing issues for high-voltage III-V epitaxial power device structure have been discussed Also, it is shown how the optical triggering idea can be extended to devices with higher gain and using wide-bandgap materials (eg, SiC).