Submillimeter Wave Frequency Multipliers and IMPATT Oscillators

摘要

GaAs frequency multipliers up to 600 GHz and Si p+-n-n+ IMPATT oscillators up to 430 GHz were developed. An output power of 0.12 mW at 450 GHz was obtained by the tripler using a thin film integrated circuit and a GaAs honeycomb-type Schottky barrier diode. The IMPATT oscillator cooled by liquid nitrogen delivered 2.2 mW at 412 GHz with 0.047 conversion efficiency.