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Semiconductor-superlattice frequency multiplier for generation of submillimeter waves

机译:半导体超晶格倍频器用于产生亚毫米波

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We report on a semiconductor-superlattice frequency multiplier for the generation of submillimeter waves. A monochromatic microwave-pump field (frequency near 100 GHz) periodically excited a superlattice into states of negative differential conductivity giving rise to space-charge domain creation and annihilation joint with a nonsinusoidal high-frequency current and radiation at harmonics of the pump field. A highly doped GaAs/AlAs superlattice allowed the conversion of pump to third-harmonic radiation at 300 GHz with an efficiency of about 1% (power~30 μW).
机译:我们报告了用于产生亚毫米波的半导体超晶格倍频器。单色微波泵浦场(频率接近100 GHz)会周期性地将超晶格激发到负差分电导率状态,从而产生非正弦波高频电流和泵浦场谐波的辐射,从而形成空间电荷域和an灭。高度掺杂的GaAs / AlAs超晶格可以将泵浦转换为300 GHz的三次谐波辐射,效率约为1%(功率〜30μW)。

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