Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit

摘要

This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor (HI) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and capacitor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 250 around 5GHz.