Ka-Band BiCMOS 4-Bit Phase Shifter with Integrated LNA for Phased Array T/R Modules

摘要

This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 驴m SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1卤1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7掳 at 30-38 GHz. The total chip size is 900 脳 400 驴m2 (0.36 mm2) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.