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Packaging of devices for topside cooling by replacing air-bridges with Su-8 polymer bridges MESFET example

机译:通过用Su-8聚合物桥代替空气桥来包装用于顶部冷却的设备MESFET示例

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This paper takes an in-depth look at the qualifications of Su-8 photoresist as a low-k dielectric in the fabrication of integrated circuits (ICs). This paper discusses replacing air bridges on MESFET devices with polymer bridges fabricated from Su-8. This polymer bridge structure has several impacts for on-wafer processing as well as topside cooling packaging techniques for microwave devices. For on-wafer processing, replacing airbridges with polymer bridges eliminates the need for wafer thinning, through-wafer vias, and provides a dielectric interface material for Cu interconnects. Eliminating processing steps as well as the fragile topside air-bridge structures improves both the yield and the reliability. From a packaging perspective, fabricating polymer bridges allows further topside processing to take place in order to build packaging structures that can both remove the FET generated heat from the topside of the device as well as have access to the electrical I/Os.
机译:本文深入研究了Su-8光刻胶在集成电路(IC)制造中作为低k电介质的资格。本文讨论了用Su-8制成的聚合物桥代替MESFET器件上的空气桥。这种聚合物桥结构对晶圆上加工以及微波设备的顶部冷却封装技术有多种影响。对于晶片上处理,用聚合物桥代替空气桥消除了对晶片变薄,晶片通孔的需要,并提供了用于Cu互连的介电界面材料。消除加工步骤以及易碎的顶部气桥结构可提高产量和可靠性。从封装的角度来看,制造聚合物桥可以进行进一步的顶侧处理,以构建既可以从器件顶侧去除FET产生的热量又可以访问电I / O的封装结构。

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