Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells

摘要

We have investigated the characteristics of p-GaAs/i-n-Ga_0.97 In_0.03N_0.01As_0.99 heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized i-layer thickness of 600nm, maximum quantum efficiency of 80% has been obtained, and the hole diffusion length in n-Ga_0.97In_0.03N_0.01As_0.99 film was ~160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm² has been achieved