High voltage Schottky barrier diodes in synthetic single crystal diamond

摘要

Recent results proved the possibility of obtaining synthetic single crystal diamond with good crystal quality and excellent consistency. High voltage p-type Schottky barrier diodes (SBDs) have been fabricated on diamond, using gold (Au) as the Schottky metal and boron as doping material. In this study, on-state and off-state experimental and simulated data are presented and excellent theory-experiment agreement is revealed. The usage of diamond SBDs as ultra violet (UV) photodetectors is also analysed. On-state and off-state simulations, for different optical beam power densities, have been carried out and the theoretical data are provided.