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Quantum Monte Carlo simulation of the single electron transistor conductance

机译：单电子晶体管电导的量子蒙特卡罗模拟

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Quantum Monte-Carlo simulation is made for symmetric Anderson model. The Matsubara function is used for the calculation the conductance of the Single Electron Transistors utilizing a Landauer-type formula. Comparison with "poor man's scaling" shows that there is a big difference at moderate Coulomb interaction.

机译：针对对称安德森模型进行了量子蒙特卡洛仿真。 Matsubara函数用于利用Landauer型公式计算单电子晶体管的电导。与“穷人的缩放比例”的比较表明，适度的库仑相互作用存在很大差异。

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《》|2003年|p.232-235|共4页
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Gelmont; B.; Woolard; D.; Williams; R.;
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中图分类无线电电子学、电信技术;
关键词
single electron transistors; Monte Carlo methods; quantum dots; Anderson model; electric admittance; Coulomb blockade; quantum Monte Carlo simulation; single electron transistor conductance; symmetric Anderson model; Matsubara function; Landauer type for;

机译：单电子晶体管;蒙特卡罗方法;量子点;安德森模型;电导率;库仑阻塞;量子蒙特卡罗模拟;单电子晶体管电导;对称安德森模型;松原函数;兰道尔型;

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专利

1. Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations - art. no. 125314 [J] . Wallisser C., Limbach B., vom Stein P., Physical Review, B. Condensed Matter . 2002,第12期

机译：单电子晶体管的电导率：实验数据与蒙特卡洛计算的比较-艺术。没有。 125314
2. Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations - art. no. 125314 [J] . Wallisser C., Limbach B., vom Stein P., Physical Review, B. Condensed Matter . 2002,第12期

机译：单电子晶体管的电导率：实验数据与蒙特卡洛计算的比较-艺术。没有。 125314
3. Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Hideaki Tsuchiya, Azusa Oda, Matsuto Ogawa, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第11期

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4. Quantum Monte Carlo simulation of the spectral density within single electron transistors [C] . Gelmont B.L., Woolard D.L. Data Engineering, 2005. ICDE 2005. . 2005

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5. Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations. [D] . Soligo, Riccardo. 2016

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7. Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations [O] . Wallisser, C., Limbach, B., Stein, P. vom, 2002

机译：单电子晶体管的电导率：比较蒙特卡罗计算的实验数据

Quantum Monte Carlo simulation of the single electron transistor conductance

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