Investigation of heavily doped silicon as an anode material for top-emitting organic light-emitting diode

摘要

For organic light-emitting diodes, the higher work-function of heavily doped p-type silicon makes it a potentially more efficient hole-injecting anode than indium-tin oxide. However, it was determined from a systematic set of experiments that while hole injection was indeed achieved, the efficiency was not particularly high and light emission was consistently absent. A most likely explanation was the diffusion of radiation-quenching, conventional dopants of silicon into the organic emission layer. Diffusion was partially blocked by capping silicon with a thin inorganic oxide layer.