SEU and TID testing of the Samsung 128 Mbit and the Toshiba 256 Mbit flash memory

摘要

The Samsung KM29U128T 128 Mbit and the Toshiba TC58256FT/DC 256 Mbit flash memories were screened for use in the X2000 solid state recorded. Single Event Upset (SEU) and Total Ionizing Dose (TID) results are presented in this paper.