Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al/sub 2/O/sub 3/, Si and GaAs substrates

摘要

The low temperature photoluminescence (PL) characteristics of GaN thin films grown by radio-frequency plasma-assisted molecular beam epitaxy on Al/sub 2/O/sub 3/, GaAs and Si substrates have been investigated. A different dominating transition characterized the PL spectrum of each substrate type, indicating the significant role of the substrate in the control of the GaN epilayer's properties.