Total-Dose Effects in InP Devices

摘要

Total dose testing was performed on biased and unbiased InP devices using a 60Co source. Photodiodes were tested to a total dose of more than 17 Mrad(Si) and heterojunction bipolar transistors were tested to total doses of more than 3.6 Mrad(Si) and 190 krad(Si) at dose rates of 287 rad(Si)/s and 0.34 rad(Si)/s respectively. For all tests, the devices showed little degradation, indicating that InP technology is sufficiently robust to total dose effects for flight usage.