The role of doping profile on power gain of SiGe HBTs under constant Ge strain

摘要

The power gain characteristics of SiGe HBTs with constant total Ge strain in the base region, but different doping profiles, are studied. It is found that the doping profile is the dominant factor in determining f/sub max/ and high-frequency power gain, while Ge profile only plays an insignificant role. In addition, CE and CB configurations show distinct characteristics of power gain sensitivity on base doping profiles and DC bias.