voltage-controlled oscillators; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; Ge-Si alloys; semiconductor materials; wireless LAN; radio receivers; MMIC frequency convertors; MMIC oscillators; integrated circuit design; integrated circuit measurement; broadband SiGe mixer; WLAN applications; X-band quadrature generation; image-rejection; image-reject receiver; WLAN bands; SiGe-HBT process; modified Gilbert mixer; common-base input stage; broadband RF operation; supply voltage; broadband quadrature generation; fully integrated X-band VCO; master-slave divider; chip-area; image suppression; microwave bipolar transistor oscillators; microwave frequency conversion; microwave mixers; 5 GHz; 0.8 micron; 2.5 to 6 GHz; 3 V; 10 GHz; SiGe;
机译:采用SiGe-HBT技术的电流折叠式上变频混频器和具有中心抽头电感器的VCO,适用于5 GHz无线局域网应用
机译:采用SiGe-HBT技术的电流折叠式上变频混频器和具有中心抽头电感的VCO,适用于5 GHz无线局域网应用
机译:采用Si / SiGe BiCMOS技术的3V可变增益放大器,用于5GHz WLAN应用
机译:宽带SiGe混频器,用于具有X波段正交生成和高图像抑制功能的5 GHz WLAN应用
机译:一个分频器和分频器网络,用于在5--6 GHz WLAN发射机中生成正交LO相位。
机译:第五代(5G)应用的宽带双极化基站天线
机译:利用0.18 Pm CMOS技术TK7871.99.M44 H279 2008 f rb的IEEE 802.11a WLAN发射机应用的上变频混频器和Lc正交振荡器的设计与实现。