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A newly structured high voltage diode highlighting oscillation free function in recovery process

机译:一种新型结构的高压二极管,突出了恢复过程中的无振荡功能

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At present, switching devices with high performance such as GCT (Gate Commutated Turn-off) thyristor and IGBT which had higher operation voltage than about 4.5 kV have been realized. However, as a freewheeling diode which should realize the suitable recovery performance to the turn-on performance of those switching devices is not successful, they were restricted in the turn-on operation for inverter systems. Therefore, advanced diodes with high operation voltage and soft recovery performance are desired in order to improve the system performance.
机译:目前,已经实现了具有高于约4.5kV的工作电压的诸如GCT(栅极换向关断)晶闸管和IGBT的高性能开关器件。但是,由于不能实现对那些开关器件的导通性能具有合适的恢复性能的续流二极管,因此它们在逆变器系统的导通操作中受到限制。因此,需要具有高工作电压和软恢复性能的高级二极管来改善系统性能。

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