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Local characterization of piezoelectric and electrostrictive thin films subjected to high electric fields

机译:高压电场作用下压电和电致伸缩薄膜的局部表征

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Local piezoelectric measurements, performed on PZT thin films and on electrostrictive PMN-PT plates, subjected to very high d.c. electric fields, are presented. The thin films were obtained by pulsed laser deposition from commercial PZT targets. The PMN-PT thin plates where obtained by sintering, via the columbite process. A special device, that allows the local measurement of the piezoelectric constant while the same area of the sample is subjected to the bias field, was constructed. An electrical circuit allows the separation of the two signals in order to have only the low intensity ac. Signal from the film detected by the instrument. The sample can be scanned over its surface and local measurements of the piezoelectric constant can be performed with a spatial resolution of about 1 mm and a sensitivity of less than one tens of pC/N. The d.c electric field can be varied between 0 and few kV/mm. Results concerning spatial variation of the piezoelectric constant of piezoelectric thin films and the induced piezoelectric constant of electrostrictive materials under high intensity bias electric fields are presented and discussed.
机译:在PZT薄膜和电致伸缩PMN-PT板上进行的局部压电测量具有很高的d.c.电场。通过脉冲激光沉积从商用PZT靶获得薄膜。 PMN-PT薄板是通过钴矿工艺通过烧结获得的。构造了一种特殊的设备,该设备可以在对样品的相同区域施加偏置电场的同时进行压电常数的局部测量。电路允许分离两个信号,以便仅具有低强度的交流电。仪器检测到的胶片信号。可以在样品的整个表面上扫描样品,并且可以以约1 mm的空间分辨率和小于几十pC / N的灵敏度执行压电常数的局部测量。直流电场可以在0至几kV / mm之间变化。提出并讨论了有关压电薄膜的压电常数在高强度偏置电场下的空间变化和电致伸缩材料的感应压电常数的空间变化的结果。

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