A self-isolated intelligent IGBT for driving ignition coils has been developed for the first time. The device fits into a TO-220 package and monolithically integrates a vertical IGBT with NMOS driving and protection circuits by adding only 4 mask steps to the standard IGBT process. This intelligent IGBT survives an unclamped inductive switching energy of 300 mJ at T/sub j/=150/spl deg/C due to an advanced collector-current-ballasting-resistor technique, and it has eliminated the latching problem of parasitic thyristors located at integrated NMOS devices by a new Zener-resistor-networking protection technique. Excellent current-limiting operation under V/sub GE/=3.5 V driving has been realized by newly developed high-frequency gate-decoupling and collector-to-gate resistive feed-back techniques.
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机译：首次开发了用于驱动点火线圈的自隔离智能IGBT。该器件采用TO-220封装，通过在标准IGBT工艺中仅增加4个掩膜步骤，将垂直IGBT与NMOS驱动和保护电路整体集成在一起。由于采用了先进的集电极-电流镇流电阻技术，该智能IGBT在T / sub j / = 150 / spl deg / C时可承受300 mJ的非钳位电感开关能量，并且消除了寄生晶闸管位于通过一种新型的齐纳电阻网络保护技术集成了NMOS器件。通过新开发的高频栅极去耦和集电极到栅极电阻反馈技术，在V / sub GE / = 3.5 V驱动下实现了出色的限流操作。
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