Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

摘要

Low sheet resistance and extremely shallow profiles are achieved by plasma doping with low process damage and high activation efficiency. High performance pMOSFETs have also been fabricated by taking advantage of well-controlled plasma doped extensions. Linear transconductance (Gm) of the pMOSFET with plasma doped extensions is about 30% larger than that of 10 keV ion implanted device with same source/drain junction depth.