Power PiN diode model for PSPICE simulations

摘要

An accurate physics based model for power PiN diodes is derived and implemented as a subcircuit into the PSPICE circuit simulator. The model is based on an equivalent circuit representation of the base region, obtained by solving the ambipolar diffusion equation with the finite difference method. Good agreement is obtained by comparing the results of the proposed PiN diode model with experimental and simulated results taken from the literature.