Design of high performance sense amplifier using independent gate control in sub-50nm double-gate MOSFET

摘要

The double-gate (DG) transistor has emerged as the most promising device for nanoscale circuit design. Independent control of front and back gate in DG devices can be effectively used to improve performance and reduce power in sub-50 nm circuits. In this paper, we propose a high-performance sense-amplifier design using independent gate control in symmetric and asymmetric DG devices. The proposed design reduces the sensing delay of the sense amplifier by 30-35% and dynamic power by 10% (at 6 GHz) from the connected gate design.