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Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm

机译:从特征线宽为40 nm至240 nm的测试结构中提取的SEM和HRTEM CD测量结果的比较

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CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features are incorporated into a new test structure that has been designed to facilitate this type of CD-metrology study. The purpose of the work was to characterize the calibration statistics of SEM transfer-metrology when HRTEM is used as primary metrology in CD reference material calibration.
机译:CD(临界尺寸)测量值已从线宽在40到240 nm之间的同一组单晶硅特征的SEM(扫描电子显微镜)和HRTEM(高分辨率透射电子显微镜)图像中提取。硅功能部件被合并到一个新的测试结构中,该结构旨在促进此类CD计量学研究。这项工作的目的是当HRTEM用作CD参考材料校准的主要度量标准时,表征SEM传输计量学的校准统计数据。

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