A comparative study of the effects of CH/sub 4//H/sub 2/ versus CO/H/sub 2/ gas mixture on the quality of CVD diamond films deposited on silicon substrates

摘要

This paper investigates the quantifiable effects of the gas flow mixture on the structural quality of CVD diamond films. The experimental study includes two types of gas flow mixtures: (a) CH/sub 4//H/sub 2/ and (b) CO/H/sub 2/. All films are grown in 5" quartz dome, 3" substrate reactor. The reactor output variables, which include film morphology expressed by the growth parameter /spl alpha/ and grain size, structural quality as measured by Raman spectra and scanning electron microscopy (SEM) techniques, linear growth rate, and carbon conversion efficiency, are examined and a complete analysis is presented in this paper.