Growth of thick CdTe films by close-space sublimation technique

摘要

High resistivity CdTe thick films (50 to 300 /spl mu/m) have been deposited by using close-space-sublimation technique with very high growth rate of about 5-10 /spl mu/m/min. In certain deposition conditions, bulk-like free-standing thick films are obtained. The resistivity of deposited films is in the order of 10/sup 10/ /spl Omega/m without any intentional doping. The current voltage characteristic shows a typical space charge limited behavior at bias voltages higher than 1 V. The effective hole mobility of 0.2 cm/sup 2//Vs is estimated. In addition, the films show clear photo-response to short laser pulse excitation, indicating feasibility for X-ray imaging devices.