Extraction of MESFET equivalent-circuit elements by sub-bands optimization

摘要

A simple method for MESFET parameters extraction is presented, where the wideband behavior of intrinsic and extrinsic elements is taken into account. The method is based on splitting the whole operating frequency into several sub-bands where extraction of selected set parameters is performed. This modeling process overcomes drawbacks of global optimization technique and gives more insight into device's physical behavior. This new approach shows good agreement between measurements and simulations.