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Polysilicon overfill etch back using wet chemical spin-process technology. An alternative to traditional dry etch and CMP technigues

机译:使用湿法化学旋转工艺技术对多晶硅进行过量填充回蚀。传统干蚀刻和CMP技术的替代品

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Wet chemical etch techniques have been used in semiconductor manufacturing since the advent of the industry. As device geometry's have shrunk, wet etching has been replaced by various dry etch and chemical mechanical polishing (CMP) techniques. In most cases it has been relegated to non-critical bulk film removal applications. Recent innovations in single wafer wet processing hardware and chemistries have given new life and applications to traditional wet etch techniques. In this study we investigated the feasibility of using a single wafer spin-processor chemically enhanced polish (CEP) system with automated endpoint capability for the removal and planarization of polysilicon over-fill in a deep trench isolation application as an alternative to dry etch and CMP techniques.
机译:自该行业问世以来,湿法化学蚀刻技术已用于半导体制造中。随着器件几何尺寸的缩小,湿蚀刻已被各种干蚀刻和化学机械抛光(CMP)技术取代。在大多数情况下,它已被移至非关键的批量薄膜去除应用中。单晶片湿法处理硬件和化学方面的最新创新赋予了传统湿法蚀刻技术新的生命和应用。在这项研究中,我们研究了使用具有自动终点功能的单晶片旋转处理器化学增强抛光(CEP)系统来去除和平坦化深沟槽隔离应用中的多晶硅过量填充作为干法蚀刻和CMP的替代方法的可行性。技术。

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