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Influence of Bias-enhanced nucleation on thermal conductance through plasma-enchanced chemical vapor deposited diamond films

机译：偏压增强成核对通过等离子体增强化学气相沉积金刚石薄膜的热导的影响

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《》|2006年|P.512-518|共7页
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Cola; B.A.; Karru; R.; Changrui Cheng; Xianfan Xu; Fisher; T.S.;
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1. Influence of Bias-Enhanced Nucleation on Thermal Conductance Through Chemical Vapor Deposited Diamond Films [J] . Cola B. A., Karru R., Cheng C., IEEE Transactions on Components and Packaging Technologies . 2008,第1期

机译：偏压增强形核对化学气相沉积金刚石薄膜导热的影响
2. Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth [J] . Yueh-Chieh Chu, Yonhua Tzeng, Orlando Auciello Journal of Applied Physics . 2014,第2期

机译：微波等离子体通过偏压增强成核和偏压增强生长增强了纳米晶金刚石膜的化学气相沉积
3. Chemical vapor deposition of uniform and high-quality diamond films by bias-enhanced nucleation method [J] . Jhih-Kun Yan, Li Chang Thin Solid Films . 2006,第1a2期

机译：偏压增强成核法化学气相沉积均匀高质量的金刚石薄膜
4. Influence of Bias-enhanced nucleation on thermal conductance through plasma-enchanced chemical vapor deposited diamond films [C] . Cola B.A., Karru R., Changrui Cheng, Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronics Systems . 2006

机译：通过等离子体凸起化学气相沉积金刚石膜对偏差增强成核对热传导的影响
5. Nucleation and growth of chemical vapor deposited diamond films. [D] . Mahalingam, Pushpa. 1997

机译：化学气相沉积金刚石薄膜的成核和生长。
6. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon [O] . Sannian Song, Dongning Yao, Zhitang Song, 2015

机译：通过等离子体增强原子层沉积法沉积的GeSbTe薄膜的相变特性
7. Comparison study of nucleation and growth characteristics of chemical-vapor-deposited diamond films on CoSi2(001) and Si(001) [O] . Gu C. Z., Jiang X., Kappius L., 2000

机译：CoSi2（001）和Si（001）上化学气相沉积金刚石薄膜成核和生长特性的比较研究

Influence of Bias-enhanced nucleation on thermal conductance through plasma-enchanced chemical vapor deposited diamond films

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