Flash memory technology has followed Moore''s Law for nine generations and with the introduction of 90 nm tech-nology, moved into the nanotechnology age. Scaling is ex-pected to continue but with increasingly difficulty. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. Based on the introduction of ma-terial innovations, it is expected that flash memory cell can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future.
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