A novel high performance resonant gate drive circuit with low circulating current

摘要

In this paper, a new resonant gate drive circuit is proposed for power MOSFETs. The proposed circuit can recover a portion of the CV/sup 2/ gate energy and it achieves quick turn on and turn off transition times to reduce switching loss and conduction loss in power MOSFETs. The circuit consists of four control switches and a small resonant inductance. The current through the resonant inductance is discontinuous in order to minimize circulating current conduction loss present in other methods. An analysis, design procedure, loss analysis, simulation results and experimental results are presented for the proposed circuit.