Modeling and simulation of electron injection during programming in Twin Flash/spl trade/ devices based on energy transport and the non-local lucky electron concept

摘要

A simulation setup was developed to study the details of electron injection during programming of Twin Flash/spl trade/ cells. A prerequisite for accurate modeling of injection phenomena caused by high electric fields is the consideration of hot carrier effects. This means that energy transport has to be included in the modeling of charge carrier behavior. This can be done most predictively by solving Boltzmann's transport equation for electrons using the Monte Carlo technique. Alternatively, an energy transport term can be integrated into the classical continuity equation combined with the solution of an additional differential equation for the energy transport. The carrier injection during programming is modeled by the application of a non-local lucky electron model which is based on field line tracing taking into account those electrons having enough energy to overcome the oxide barrier (Meinerzhagen,1988).