nanolithography; masks; photolithography; sputter etching; nickel; self-assembly; indium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; semiconductor quantum wells; InGaN multiquantum-well nanorod; ICP-RIE dry etching; self-assembled nickel nanomasks; InGaN; Ni;
机译:使用nikel纳米掩模和干法刻蚀InGaN基发光二极管形成纳米棒InGaN / GaN多量子阱
机译:自组装镍纳米岛掩模制备纳米棒InGaN / GaN多量子阱
机译:具有自组装Ni金属岛的InGaN / GaN纳米棒发光二极管的制备
机译:Ni纳米掩模的IngaN多量子阱纳米棒的制造
机译:RF溅射法制备Si / Ingan异质结太阳能电池:改进氮化铟镓(IngaN)薄膜的电气和光学性能
机译:使用Ni-Au双金属催化剂制备垂直GaN / InGaN异质结构纳米线
机译:使用Ni-Au双金属催化剂制备垂直GaN / InGaN异质结构纳米线