Thermally robust Ta-doped Ni SALICIDE process promising for sub-50 nm CMOSFETs

摘要

For sub-50 nm device application, Self-Aligned siLICIDE (SALICIDE) process by NiTa alloy has been developed for the first time. Use of NiTa-alloy makes nickel silicide on 50 nm gate thermally-robust up to 600/spl deg/C during device fabrication. NiTa SALICIDE process can also achieve excellent value and distribution of sheet resistance on 30 nm gate as well as low junction leakage current compared to Co SALICIDE. Furthermore, the drive current of PMOS is greatly increased. As a result, high-performance 90 nm MOSFETs is successfully integrated with NiTa SALICIDE process.