Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices

摘要

In this paper, we compare the 3D VQM expressions obtained for the capacitive energy of the oxide region and the depletion region with those for a device with infinitely large gate. The 3D quantum mechanical effect of the fringe field on the energy is then extracted as a correction factor to the capacitance for each region.