A novel interband-resonant-tunneling-diode(I-RTD) based high-frequency oscillator

摘要

A novel type of interband-RTD (I-RTD) based upon staggered-bandgap heterostructures was investigated. A detailed theoretical analysis of the time-dependent characteristics of an I-RTD based upon a type-II resonant tunneling heterostructure is presented. Specifically, an AlGaSb/InAs/AlGaSb double-barrier structure was considered to determine the influence of multi-band transport effects on the static and dynamic behavior of the I-RTD device.