Simulation of the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR discs

摘要

In current research on optical phase change data storage, it is essential to understand accurately the physics underlying writing and erasing processes. Computer simulation combined with the appropriate physical models and experimental data is the most valuable tool available. We have established optical, thermal and phase transformation (thermodynamics and kinetics) models and constructed a simulation based on them. We use this simulation to reproduce and forecast the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR (digital video recording) discs.