Highly reliable and high-power operation of 1.05 /spl mu/m InGaAs/GaAsP strain-compensated single-quantum-well laser diodes for pumping Tm-doped fiber amplifiers

摘要

High reliability and high-power 1.05 /spl mu/m highly strained InGaAs laser diodes were realized with using strain compensation for pumping TDFA. We can expect high performances similar to those of conventional 0.98 /spl mu/m lasers being used for pumping EDFA since the high optical property of InGaAs quantum well can be maintained up to 1.1 /spl mu/m in the present study. Higher power operation will be expected by optimizing the waveguide design and growth parameters.