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Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications

机译：多能砷离子注入砷化镓光电导开关，用于超快和毫米波应用

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摘要

GaAs bombarded with arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz.

机译：用多种剂量的砷离子轰击具有多种注入能量的砷化镓制成具有皮秒响应和带宽超过500 MHz的超快光电导开关。

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《》|1999年|P.367-368|共2页
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Ci-Ling Pan;
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中图分类无线电电子学、电信技术;
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1. Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs [J] . Tze-An Liu, Gong-Ru Lin, Yen-Chi Lee, Journal of Applied Physics . 2005,第1期

机译：多能砷离子注入砷化镓制造的超快光电导开关和太赫兹螺旋天线中的暗电流和后缘抑制
2. Modeling of terahertz pulse generation from LT-GaAs ultrafast photoconductive switches [J] . Ma Zhe, Ma Hongrnei, Yang Chuntao, Systems Engineering and Electronics, Journal of . 2011,第3期

机译：LT-GaAs超快光电导开关产生太赫兹脉冲的建模
3. Modeling of terahertz pulse generation from LT-GaAs ultrafast photoconductive switches [J] . Zhe Ma, Hongmei Ma, Chuntao Yang, 系统工程与电子技术（英文版） . 2011,第003期

机译：LT-GaAs超快光电导开关产生太赫兹脉冲的建模
4. Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications [C] . Ci-Ling Pan SBMO/IEEE MTT-S, APS and LEOS International Microwave and Optoelectronics Conference . 1999

机译：用于超快和毫米波应用的多能量砷离子注入的GaAS光电导电开关
5. Application of ultrafast optical techniques to the characterization of millimeter-wave integrated circuits and radiating structures. [D] . Yang, Kyoung. 2001

机译：超快光学技术在毫米波集成电路和辐射结构表征中的应用。
6. IMPATT Diodes Based on 〈111〉 〈100〉 and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows [O] . Bhadrani Banerjee, Anvita Tripathi, Adrija Das, 2015

机译：基于〈111〉〈100〉和〈110〉定向GaAs的IMPATT二极管：比较研究以寻找毫米波大气窗口的最佳方向
7. Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs [O] . Tze-An Liul 2014

机译：多能砷离子注入砷化镓制造的超快光电导开关和太赫兹螺旋天线中的暗电流和后缘抑制
8. AASERT 98: Ultrafast GaAs Photoconductivity and Applications for Radiation-Hard Electronics. [R] . Whitaker, J. F. 2001

机译：aasERT 98：超快Gaas光电导率和辐射硬电子应用。

Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications

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