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Self-timed refreshing approach for dynamic memories

机译:动态存储的自定时刷新方法

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Refreshing dynamic circuits must be carried out before stored voltages reach unacceptable levels. In this paper we present CMOS circuitry that can be used to sense the integrity of stored data, provide timely refreshing to these dynamic circuits and provide high performance. Differential amplifiers are used to provide the difference between a degrading stored voltage and a reference voltage. This difference gets converted to a single-ended output which serves as the refresh trigger. Memory arrays are used as test beds to verify the functionality and effectiveness of these circuits. The circuits considered in this paper are suitable for use in high speed, low power and high density memory arrays.
机译:必须在存储的电压达到不可接受的水平之前执行刷新动态电路。在本文中,我们介绍了可用于检测存储数据完整性,及时刷新这些动态电路并提供高性能的CMOS电路。差分放大器用于提供降级的存储电压和参考电压之间的差异。此差异将转换为用作刷新触发器的单端输出。存储器阵列用作测试平台,以验证这些电路的功能和有效性。本文考虑的电路适用于高速,低功耗和高密度存储阵列。

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