Channel engineering of 0.13 /spl mu/m nMOSFET for 1.0 V CMOS using gate poly-Si oxidation and laterally profiled, surface concentrated channel technologies

摘要

We have developed a 0.13 /spl mu/m nMOSFET for 1.0 V CMOS using gate poly-Si oxidation and laterally profiled surface concentrated channel technologies which realize high performance (Ion=0.47 mA//spl mu/m, Gm=680 mS/mm, Vth roll-off=33 mV) with a 74 mV/decade S-factor and a 16% reduction of Cj.