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The hierarchical multi-bank DRAM: a high-performance architecture for memory integrated with processors

机译:分层多存储体DRAM:用于与处理器集成的内存的高性能体系结构

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A microprocessor integrated with DRAM on the same die has the potential to improve system performance by reducing the memory latency and improving the memory bandwidth. However a high performance microprocessor will typically send more accesses than the DRAM can handle due to the long cycle time of the embedded DRAM, especially in applications with significant memory requirements. A multi-bank DRAM can hide the long cycle time by allowing the DRAM to process multiple accesses in parallel, but it will incur a significant area penalty and will therefore restrict the density of the embedded DRAM main memory. In this paper we propose a hierarchical multi-bank DRAM architecture to achieve high system performance with a minimal area penalty. In this architecture, the independent memory banks are each divided into many semi-independent subbanks that share I/O and decoder resources. A hierarchical multi-bank DRAM with 4 main banks each composed of 32 subbanks occupies approximately the same area as a conventional 4 bank DRAM while performing like a 32 bank one-up to 65% better than a conventional 4 bank DRAM when integrated with a single-chip multiprocessor.
机译:在同一裸片上集成了DRAM的微处理器有潜力通过减少内存等待时间和改善内存带宽来提高系统性能。但是,由于嵌入式DRAM的循环时间长,因此高性能微处理器通常会发送比DRAM能够处理的访问更多的访问,尤其是在内存要求很高的应用中。多库DRAM通过允许DRAM并行处理多次访问可以掩盖较长的循环时间,但是这将招致很大的面积损失,因此将限制嵌入式DRAM主存储器的密度。在本文中,我们提出了一种分层的多存储区DRAM架构,以最小的面积损失来实现较高的系统性能。在这种体系结构中,每个独立的存储体都分为许多共享I / O和解码器资源的半独立子存储体。具有四个主要存储库的分层多存储库DRAM,每个存储库由32个子存储库组成,与传统的4个存储库DRAM占用的面积大致相同,而与单个4个DRAM集成时,其性能比传统的4个存储库DRAM高32%。芯片多处理器。

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