A large area (63.6 mm/spl times/64 mm) n-on-n silicon strip detector was fabricated, implementing various p-stop structures in the n-side. The detectors were characterized in laboratory and in beam tests. The inter-strip capacitance showed features in which the individual p-stop structure had the longest tail toward saturation. The beam tests showed other p-stop structures collected more charge in the mid-strip region than the individual p-stop structure. In addition, there was a source which lost or spread charge and induced noise where the over-depletion was insufficient.
展开▼
机译：制作了一个大面积（63.6 mm / spl倍/ 64 mm）的n对n硅条检测器，在n侧实现了各种p挡结构。在实验室和光束测试中对探测器进行了表征。条间电容显示的特征是各个p挡结构具有最长的趋于饱和的尾巴。束流测试表明，其他p型光圈结构在中带区域收集的电荷比单个p型光圈结构更多。此外，在过度耗尽不足的情况下，有一个源会丢失或散布电荷并产生噪声。
展开▼
