Photocurrents generated by moving optical interference patterns in photoconductive semiconductors in the presence of interband optical excitations

摘要

Summary form only given. When two monochromatic optical fields interfere inside photoconductive semiconductors containing deep level recombination centers, the spatially inhomogenous optical intensity pattern causes the redistribution of photo-excited free charge carriers, resulting in the formation of an internal space charge electric field. The photoconductive semiconductor used was a Si sample with polished but not Ar-coated surfaces.