Summary form only given. We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.
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机译：仅提供摘要表格。我们展示了VCSEL激光二极管内的第一个腔内InGaAs量子阱光电探测器。有效响应度高达0.23 A / W;暗电流小于1 nA，受本底噪声限制。在这项工作中，我们介绍了具有腔内量子阱光电探测器的第一个VCSEL的实验结果。具有嵌入式位置的量子阱可防止杂散光干扰功率检测和监视，同时其薄的有源区可将暗电流降至最低。
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