Temperature stimulated reverse annealing of neutron induced damage in high resistivity silicon detectors

摘要

Neutron irradiated high resistivity silicon detectors have been subjected to elevated temperature annealing's (ETA). It has been found that both detector full depletion voltage and leakage current exhibit reverse annealing behavior for highly irradiated detectors: they increase with ETA. Laser induced current shapes have indicated a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Data of current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have shown that the dominant microscopic effect is the increase of a level at 0.39 eV.