GaInP/AlGaInP metal clad ridge waveguide visible laser diodes with CH/sub 4//H/sub 2//Ar reactive ion etched mesa stripes

摘要

GaInP/AlGaInP metal clad ridge waveguide visible laser diodes with dry etched stripes were fabricated. A symmetric mesa shapes was obtained by reactive ion etching using a CH/sub 4//H/sub 2//Ar gas mixture. A very low threshold current of 25.4 mA and a symmetric optical field distribution were obtained.