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Monolithic arrays for monitoring industrial plant at high temperatures

机译:用于监控高温工厂的单片阵列

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Described here is a piezoelectric linear array to survive at 400/spl deg/C, for non-destructive testing of steel plant at high temperatures. Arrays could be fixed permanently to test subjects to monitor known defects by comparing images over time. A monolithic array structure was used, based on a single crystal of lithium niobate 0.6-1.0 mm thick. Each array is 45/spl times/50 mm overall and has an active area 35/spl times/15 mm. There were 60-70 elements, 250 /spl mu/m wide and on 500 /spl mu/m pitch, defined by metal film electrodes. The arrays produce longitudinal waves and have centre frequencies in the range 3-8 MHz. Backwall echoes 1.5 /spl mu/s long have been measured at high temperatures. B-scans of simulated defects in test blocks have been taken at room temperature, to show the arrays' capability for non-destructive testing.
机译:此处描述的是一种压电线性阵列,可在400 / spl deg / C的温度下存活,用于钢铁厂在高温下的非破坏性测试。阵列可以永久固定以测试受检者,以通过比较图像随时间推移来监视已知缺陷。基于0.6-1.0mm厚的铌酸锂的单晶,使用了单片阵列结构。每个阵列的总面积为45 / spl次/ 50 mm,活动区域为35 / spl次/ 15 mm。有60-70个元素,宽度为250 / spl mu / m,间距为500 / spl mu / m,由金属膜电极定义。阵列产生纵波,中心频率在3-8 MHz之间。在高温下测得的底墙回波长为1.5 / spl mu / s。已在室温下对测试块中的模拟缺陷进行了B扫描,以显示阵列的无损检测能力。

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