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Measurement of electron temperature and density in the DIII-D neutral beam ion source arc chamber

机译:DIII-D中性束离子源电弧室中电子温度和密度的测量

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A swept-bias Langmuir probe diagnostic was employed with the DIII-D neutral beam ion source in an effort to study the effects of filament temperature, arc power, and backstreaming energetic electrons on the electron temperature and density of the arc discharge inside the ion source arc chamber. The arc chamber contains six Langmuir probes biased with at negative DC voltage. These probes provide a feedback signal for regulation of the arc power supply and give a relative indication of plasma uniformity within the arc chamber. For this study, one probe was reconnected to a voltage-sweeping power supply, and probe current versus voltage characteristics were generated. These characteristics provided the information necessary to calculate electron temperature and density. With arc discharge only, the results demonstrated that as filament temperature increases, so does electron density. Electron temperature decreases at a faster rate, however, as required to maintain constant ion saturation current (regulated by the arc power supply). The results also demonstrated that increasing arc power (through control of the arc power supply) results in higher electron temperature and density. Experiments were also performed with probe voltage sweeps during beam extraction, at various accelerator voltage levels and at different delay times after beam turn-on with a fixed acceleration voltage. These results indicated an increase in electron temperature and density its acceleration voltage is increased. However, nearly identical trends result when arc discharges are produced at the same parameter settings as during these beams, but without beam extraction. This indicates minimal influence of backstreaming energetic electrons on electron temperature and density in the arc chamber. Temperature and density also remain fairly constant over time during a long beam pulse. These results help to provide a better understanding of ion source dynamics, and may lead to future improvements in operation.
机译:扫描偏向Langmuir探针诊断仪与DIII-D中性束离子源一起使用,以研究灯丝温度,电弧功率和高能电子逆流对电子温度和离子源内部电弧放电密度的影响电弧室。电弧室包含六个用负DC电压偏置的Langmuir探头。这些探针提供了用于调节电弧电源的反馈信号,并给出了电弧室内等离子体均匀性的相对指示。在本研究中,将一个探头重新连接到电压扫描电源,并生成了探头电流与电压的关系曲线。这些特性提供了计算电子温度和密度所需的信息。仅使用电弧放电,结果表明随着灯丝温度的升高,电子密度也随之升高。但是,为了保持恒定的离子饱和电流(由电弧电源调节),电子温度会以更快的速度降低。结果还表明,增加电弧功率(通过控制电弧电源)会导致更高的电子温度和密度。还使用束加速期间的探头电压扫描,在各种加速器电压水平和以固定的加速电压打开束后的不同延迟时间进行了实验。这些结果表明电子温度和密度的增加,其加速电压也增加了。但是,当在与这些光束相同的参数设置下产生电弧放电但没有光束提取时,会产生几乎相同的趋势。这表明回流的高能电子对电弧室内电子温度和密度的影响最小。在长束脉冲期间,温度和密度也随时间保持相当恒定。这些结果有助于更好地了解离子源动力学,并可能导致将来的操作改进。

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